VSC7939RP 查看數據表（PDF） - Vitesse Semiconductor
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VSC7939RP Datasheet PDF : 18 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Preliminary Data Sheet
VSC7939
Electrical Characteristics
Table 1: AC Specifications
AC specifications are guaranteed by design and characterization. Typical values are for 3.3V.
Symbol
Parameter
Min Typ Max Units
Conditions
tSU
Input Latch Setup Time
tH
Input Latch Hold Time
Enable/Start-up Delay
100
100
250
ps LATCH=high
ps LATCH=high
ns
tR
tF
PWD
Output Rise Time
Output Fall Time
Pulse Width Distortion
60
80
60
80
10
50
ps 20% to 80%
ps 20% to 80%
ps See Notes 1, 2
CIDMAX Maximum Consecutive Identical Digits 80
bits
tJ
Jitter Generation
7
20
psp-p
Jitter BW=12kHz to 20MHz,
0-1 pattern.
NOTES: (1) Measured with 622Mb/s 0-1 pattern, LATCH=high. (2) PWD = (wider pulse - narrower pulse) / 2).
Table 2: DC Specifications
Symbol
Parameter
Min
ICC
Supply Current
IBIAS
Bias Current Range
1
IBIAS-OFF Bias Off Current
SBIAS
VRMD
IMD
Bias Current Stability
Bias Current Absolute Accuracy
Monitor Diode Reverse Bias Voltage
1.5
Monitor Diode Reverse Current Range 18
-480
Monitor Diode Bias Setpoint Stability
IMOD
Monitor Diode Bias Absolute Accuracy -15
Modulation Current Range
5
IMOD-OFF Modulation Off Current
Typ
TBD
230
900
±15
-50
90
Max
45
100
100
1000
480
15
60
200
Units
Conditions
RMODSET=7.3kΩ
mA
RBIASMAX=4.8kΩ
IBIAS and IMOD excluded
VCC=5V
mA Voltage at BIAS pin=(VCC-1.6)
µA
ENABLE=low or
DISABLE=high(1)
ppm/°C
%
APC open loop. IBIAS=100mA
APC open loop. IBIAS=1mA
Refers to part-to-part variation
V
µA
ppm/°C
%
IMD=1mA(2)
IMD=18µA(2)
Refers to part-to-part variation
mA
µA
ENABLE=low or
DISABLE=high(1)
Page 2
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52350-0, Rev 3.2
02/26/01
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