VSC7939W 查看數據表（PDF） - Vitesse Semiconductor
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VSC7939W Datasheet PDF : 18 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7939
SONET/SDH 3.125Gb/s
Laser Diode Driver with Automatic Power Control
Bare Die Pad Descriptions
Figure 1: Pad Assignments
1773µm (0.0698")
Pad 12
GND1
Pad 11
VCC1
(Pin 7)
Pad 10
CLK-
(Pin 6)
Pad 9
CLK+
(Pin 5)
Pad 8
VCC1
Pad 7
GND1
Pad 6
VCC1
(Pin 4)
Pad 5
DATA-
(Pin 3)
Pad 4
DATA+
(Pin 2)
Pad 3
VCC1
(Pin 1)
Pad 2
GND1
Pad 1
GND2
Pad 13 (Pin 8)
LATCH
Pad 14
ENABLE
(Pin 9)
Pad 15
DISABLE
(Pin 10)
Pad 16
GND1
Pad 17
BIASMON
(Pin 11)
2233µm
(0.0879")
Pad 18 (Pin 12)
MODMON
Pad 19 (Pin 13)
FAIL
Pad 20
GND4
Pad 21
PB_GND
Pad 22 (Pin 14)
APCFILT
VSC7939
(Pin 32) Pad 48
VCC2
(Pin 31)
Pad 47
BIASMAX
(Pin 30) Pad 46
MODSET
Pad 45
GND2
(Pin 29) Pad 44
APCSET
(Pin 28) Pad 43
RESERVED
Pad 42
GND3
Pad 41
PB_GND
(Pin 27)
Pad 40
GND3
Pad 39
PB_GND
Pad 23 (Pin 15)
GND4
(Pin 26) Pad 38
CAPC
Pad 24
VCC4
(Pin 16)
(Pin 25) Pad 37
VCC3
Pad 25
BIAS (Pin 17)
(Pin 18)
(Pin 19)
Pad 26 Pad 27 Pad 28 Pad 29
PB_GND1 VCC4 DB_OUT+ OUT+
(Pin 20)
Pad 30
OUT-
Pad 31
DB_OUT-
(Pin 21)
Pad 32
VCC4
(Pin 22)
Pad 33
GND4
(Pin 23)
Pad 34
GND3
(Pin 24)
Pad 35
MD
Pad 36
GND3
20µm
(0.0008")
Die Size:
1773µm x 2233µm (0.0698" x 0.0879")
Die Thickness:
625µm (0.0246")
Pad Pitch:
115µm (0.0045")
Pad Size:
95µm x 95µm (0.0037" x 0.0037")
Pad to Pad Clearance:
20µm (0.0008")
Pad Passivation Opening: 95µm x 95µm (0.0037" x 0.0037")
Scribe Size:
75µm (0.0030")
75µm
(0.0030")
G52350-0, Rev 3.2
02/26/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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