VSC838UG 查看數據表（PDF） - Vitesse Semiconductor
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VSC838UG Datasheet PDF : 20 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
3.2Gb/s
36x37 Crosspoint Switch
Preliminary Data Sheet
VSC838
DC Characteristics
All characteristics are over the specified operating conditions.
Table 3: Power Supply Requirements
Parameter
Description
Min
ICC
VCC supply current
PT
Total chip power (with ITERM = 0 and
back-terminations ON, high drive)
Typ
2,286
6
Max
3,428
9
Units
Conditions
mA
MAX PT is with +5%
W
Supply, +85°C case
temperature and high
drive
Table 4: Control Port Input Levels (LVTTL/CMOS)
Parameter
VIH
VIL
IIH
IIL
VOH
VOL
VOHPU
VOLPU
Description
Input HIGH voltage
Input LOW voltage
Input HIGH current
Input LOW current
Output HIGH voltage
Output LOW voltage
VOH with external pull-up
VOL with external pull-up
Min
1.7
0
VCC-0.2
0
2.4
Typ Max Units
Conditions
VCC+1.0
0.8
TBD
TBD
VCC
0.2
0.4
V
V
mA
mA
V DC Load < 500µA
V DC Load < 2mA
V 250Ω to 3.3V(5%)
V 250Ω to 3.3V(5%)
Table 5: Signal Input Levels (high-speed signal path)
Parameter
VIN
VICM
Description
Input voltage amplitude
Input common-mode voltage
Min
Typ Max Units
Conditions
150
VCC-0.7
1100 mV See Note 1
VCC-0.2 V See Note 2
Table 6: Signal Output Levels (high-speed signal path), TERM_CTRL=ON, DRIVE_CTRL=HI
Parameter
Description
Min
Typ Max Units
Conditions
VOUT
VOCM
Output differential voltage
Output common-mode voltage
400
VCC-0.3
600
mV See Note 1, 3
VCC-0.2 V See Note 2, 3
NOTES: (1) Mean peak-to-peak amplitude measurement of either true or complement of the differential signal.
(2) VCC = VCCP = 2.5V, VEE = 0V.
(3) Terminated in 50Ω to VCC. This termination is used for testing the part, but other terminations are allowed—see Table 9.
Page 8
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
G52351-0, Rev 3.0
02/12/01
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