VSC834 查看數據表（PDF） - Vitesse Semiconductor
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VSC834
Vitesse Semiconductor
VSC834 Datasheet PDF : 16 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Datasheet
VSC834
2.5Gb/s 17x17 Crosspoint Switch
with Input Signal Activity (ISA) Monitoring
DC Characteristics (All Characteristics Are Over The Specified Operating Conditions)
Table 5: Power
Parameter
Description
Min Typ Max Units
Conditions
ICC
PT
ITERM-V
ITERM-E
VCC supply current
Total chip power (VCC = 3.45V and +85ºC
case)
VTERM supply current with VTERM =VCC-1.3V
VTERM supply current with VTERM =VCC-2.0V
2600 mA
9
W
~0
mA
-600 mA
Note: ICC Specified with outputs terminated with 50Ω to +2.0V and Chip VTERM=+2.0V.
Table 6: Control Port Input Levels
Parameter
Description
Min Typ Max Units
Conditions
VVCOM
VVHYS
VIH
VIL
IIH
IIL
IOZ
VCOM bias voltage (L and R)
VHYS bias voltage
Input HIGH voltage (TTL)
Input LOW voltage (TTL)
Input HIGH current (TTL)
Input LOW current (TTL)
Tristate output current (TTL)
Table 7: Data Input Levels (Differential PECL)
2.0
1.65
2.0
—
3.5
0
—
0.8
—
—
500
—
—
-500
-100
—
100
V
VCC=3.3V
V
VCC=3.3V
V—
V—
µA VIN = 2.4V
µA VIN = 0.5V
µA VOUT = 0.4V-2.4V
Parameter
Description
Min Typ Max Units
Conditions
VID
VICM
Input differential voltage
Input common-mode voltage
200
— 1000 mV —
1.8
—
2.2
V VCC=3.3V
Table 8: Data Output Levels (Differential PECL)
Parameter
Description
Min Typ Max Units
Conditions
VOD
VOCM
Output differential voltage
Output common-mode voltage
600
—
1000
1.8
—
2.2
NOTE: (1) Nominal PECL mode, VCC=VCCP=3.3V, VEE=0, terminated 50Ω to +2.0V.
mV Note 1
V Note 1
G52247-0, Rev 4.2
02/09/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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