VSC837UG 查看數據表（PDF） - Vitesse Semiconductor

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VSC837UG

3.2Gb/s 68x68 Crosspoint Switch

Vitesse Semiconductor 

VITESSE

SEMICONDUCTOR CORPORATION

3.2Gb/s

68x68 Crosspoint Switch

Preliminary Data Sheet

VSC837

DC Characteristics

All characteristics are over the specified operating conditions.

Table 3: Power Supply Requirements

Symbol

ICC

PT

Parameter

VCC supply current

Total chip power (with ITERM = 0 and back-

terminations ON, high drive)

Min Typ Max Units

5600 6095 mA

13

16

W

Conditions

Table 4: Control Port Input Levels (TTL/CMOS)

Symbol

Parameter

VIH

VIL

IIH

IIL

VOH

VOL

VOHPU

VOLPU

Input HIGH voltage

Input LOW voltage

Input HIGH current

Input LOW current

Output HIGH voltage

Output LOW voltage

VOH with external pull-up

VOL with external pull-up

Min Typ Max Units

Conditions

1.7

0

VCC-

0.2

0

2.4

VCC+

1.0

0.8

TBD

TBD

VCC

0.2

0.4

V

V

µA

µA

V DC load < 500µA

V DC load < 2mA

V 250Ω to 3.3V(5%)

V 250Ω to 3.3V(5%)

Table 5: Signal Input Levels (high-speed signal path)

Symbol

VIN

VICM

Parameter

Input voltage amplitude

Input common-mode voltage

Min Typ Max Units

Conditions

150

VCC -

0.7

1100

VCC -

0.2

mV See Note 1

V See Note 2

Table 6: Signal Output Levels (high-speed signal path) TERM_CTRL=ON, DRIVE_CTRL=HI

Symbol

VOUT

VOCM

Parameter

Output differential voltage

Output common-mode voltage

Min Typ Max Units

Conditions

400

VCC-

0.3

600

VCC-

0.2

mV See Note 1, 3

V See Note 2, 3

NOTES: (1) Mean peak-to-peak amplitude measurement of either true or complement of the differential signal. (2) VCC = VCCP = 2.5V, VEE = 0V.

(3) Terminated in 50Ω to VCC. This termination is used for testing the part, but other terminations are allowed—see Table 9.

Page 8

© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012

Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com

Internet: www.vitesse.com

G52309-0, Rev 3.0

02/16/01

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