VSC7925KFL 查看數據表（PDF） - Vitesse Semiconductor
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VSC7925KFL Datasheet PDF : 10 Pages
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VITESSE
SEMICONDUCTOR CORPORATION
Preliminary Data Sheet
VSC7925
SONET/SDH 2.5Gb/s Laser Diode Driver
Table 4: Recommended Operating Conditions
Symbol
GND
VSS
TCASE KF
Parameter
Positive Voltage Rail
Negative Voltage Rail
Operational Temperature9.0 pt
Min Typ Max Units
Conditions
0
-5.5 -5.2 -4.9
-40
85
V
V
°C
Power dissipation = 1.3W
Ceramic Package
NOTE: (1) Lower limit of specification is ambient temperature and upper limit is case temperature.
Table 5: Power Dissipation
Symbol
IVSS
Parameter
Power Supply Current (VSS)
PD
Total Power Dissipation
Min Typ Max Units
Conditions
220
1200
mA IMOD = IBIAS = 0mA
mW
VSS = -5.5V, IMOD = IBIAS = 0mA,
RLOAD = 25Ω to GND
Table 6: Laser Driver DC Electrical Specifications
Symbol
IBIAS
IMOD
VIB
VIP
VOCM
Parameter
Programmable Laser Bias Current
Programmable Modulation Current
Laser Bias Control Voltage
Laser Modulation Control Voltage
Output Voltage Compliance
Min Typ Max Units
Conditions
2
50 mA
2
-
60 mA
VSS +
2.1
V
IBIAS = 50mA
VSS +
2.1
V
IMOD= 60mA
GND
-2.5V
V VSS = -5.2V
Table 7: Laser Driver AC Electrical Specifications
Symbol
Parameter
Min Typ
tR, tF
Output Rise and Fall Times
tSU
Data to Clock Setup Time
50
tH
Hold Time
50
Max
100
Units
ps
ps
ps
Conditions
25Ω load, 20%-80%,
15mA < IMOD < 60mA,
IBIAS = 20mA
G52157-0, Rev 3.2
05/01/01
© VITESSE SEMICONDUCTOR CORPORATION • 741 Calle Plano • Camarillo, CA 93012
Tel: (800) VITESSE • FAX: (805) 987-5896 • Email: prodinfo@vitesse.com
Internet: www.vitesse.com
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