VSKT250-10 查看數據表（PDF） - Vishay Semiconductors
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VSKT250-10 Datasheet PDF : 12 Pages
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
2000
1800
1600
1400
1200
1000
800
600
400
200
0
0
120°
(Rect)
3 x VSK.250.. Series
Three Phase Bridge
Connected
TJ = 130°C
0.05 K/W
00..0068 KK/ /WW
0.1 K/ W
00..1126KK//WW
0.20 K/ W
0.25 K/ W
100 200 300 400 500 600 700 20 40 60 80 100 120
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-State Power Loss Characteristics
10000
1000
Tj = 25°C
Tj = 130°C
VSK.170 Series
Per Junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
Instantaneous Forward Voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
1800
1600
1400
VSK.170.. Series
TJ = 130 °C
Per Junction
1200
1000
800
600
ITM = 800 A
500 A
300 A
200 A
100 A
50 A
400
200
0 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Reverse Recovery Charge Characteristics
10000
1000
Tj = 25°C
Tj = 130°C
VSK.250 Series
Per Junction
100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Fig. 20 - On-State Voltage Drop Characteristics
2400
2200
2000
VSK.250.. Series
TTJJ ==131030°C°C
PPererJuJunnctciotinon
1800
1600
1400
ITM = 800 A
500 A
300 A
200 A
100 A
1200
50 A
1000
800
600
400
200
0 10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 22 - Reverse Recovery Charge Characteristics
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For technical questions within your region, please contact one of the following: Document Number: 94417
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 02-Jul-10
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