W24257 查看數據表（PDF） - Winbond

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W24257

32K X 8 CMOS STATIC RAM

Winbond 

W24257

DATA RETENTION CHARACTERISTICS

(TA = 0 to 70° C for LL/L; -20 to 85° C for LE )

PARAMETER

VDD for Data Retention

Data Retention Current

Chip Deselect to Data Retention Time

Operation Recovery Time

SYM. TEST CONDITIONS MIN. TYP. MAX. UNIT

VDR #CS ≥ VDD -0.2V

2.0 -

-

V

IDDDR #CS ≥ VDD -0.2V LL/LE -

- 15 µA

VDD = 3V

L

-

- 30 µA

TCDR See data retention

0-

- nS

TR Waveform

TRC* -

- nS

TRC* = Read Cycle Time

DATA RETENTION WAVEFORM

VDD

#CS

DATA RETENTION MODE

4.5V

TC D R

VIH

VD R >= 2V

#CS1 => VD D -0.2V

4.5V

TR

VIH

ORDERING INFORMATION

PART NO.

ACCESS OPERATING STANDBY

TIME CURRENT CURRENT

(nS)

MAX. (mA) MAX. (µA)

OPERATING

TEMP.

(°C)

PACKAGE

W24257S-70LL

70

70

15

0 to 70

330 mil SOP

W24257S-70L

70

70

30

0 to 70

330 mil SOP

W24257S-70LE

70

70

15

-20 to 85 330 mil SOP

W24257Q-70LL

70

70

15

0 to 70

Standard type one TSOP

W24257Q-70L

70

70

30

0 to 70

Standard type one TSOP

W24257Q-70LE

70

70

15

-20 to 85 Standard type one TSOP

Notes:

1. Winbond reserves the right to make changes to its products without prior notice.

2. Purchasers are responsible for performing appropriate quality assurance testing on products intended for use in

applications where personal injury might occur as a consequence of product failure.

Publication Release Date: February 2001

-7-

Revision A16

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