25Q80BVAAG 查看數據表（PDF） - Winbond

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25Q80BVAAG

8M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI

Winbond 

W25Q80BV

1. GENERAL DESCRIPTION

The W25Q80BV (8M-bit) Serial Flash memory provides a storage solution for systems with limited space,

pins and power. The 25Q series offers flexibility and performance well beyond ordinary Serial Flash

devices. They are ideal for code shadowing to RAM, executing code directly from Dual/Quad SPI (XIP)

and storing voice, text and data. The device operates on a single 2.7V to 3.6V power supply with current

consumption as low as 4mA active and 1µA for power-down.

The W25Q80BV array is organized into 4,096 programmable pages of 256-bytes each. Up to 256 bytes

can be programmed at a time. Pages can be erased in groups of 16 (4KB sector erase), groups of 128

(32KB block erase), groups of 256 (64KB block erase) or the entire chip (chip erase). The W25Q80BV

has 256 erasable sectors and 16 erasable blocks respectively. The small 4KB sectors allow for greater

flexibility in applications that require data and parameter storage. (See figure 2.)

The W25Q80BV supports the standard Serial Peripheral Interface (SPI), and a high performance

Dual/Quad output as well as Dual/Quad I/O SPI: Serial Clock, Chip Select, Serial Data I/O0 (DI), I/O1

(DO), I/O2 (/WP), and I/O3 (/HOLD). SPI clock frequencies of up to 104MHz are supported allowing

equivalent clock rates of 208MHz (104MHz x 2) for Dual I/O and 416MHz (104MHz x 4) for Quad I/O

when using the Fast Read Dual/Quad I/O instructions. These transfer rates can outperform standard

Asynchronous 8 and 16-bit Parallel Flash memories. The Continuous Read Mode allows for efficient

memory access with as few as 8-clocks of instruction-overhead to read a 24-bit address, allowing true

XIP (execute in place) operation.

A Hold pin, Write Protect pin and programmable write protection, with top, bottom or complement array

control, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer

and device identification with a 64-bit Unique Serial Number.

2. FEATURES

• Family of SpiFlash Memories

– W25Q80BV: 8M-bit/1M-byte (1,048,576)

– 256-byte per programmable page

– Standard SPI: CLK, /CS, DI, DO, /WP, /Hold

– Dual SPI: CLK, /CS, IO0, IO1, /WP, /Hold

– Quad SPI: CLK, /CS, IO0, IO1, IO2, IO3

• Highest Performance Serial Flash

– 104MHz Dual/Quad SPI clocks

– 208/416MHz equivalent Dual/Quad SPI

– 50MB/S continuous data transfer rate

– Up to 8X that of ordinary Serial Flash

– More than 100,000 erase/program cycles(1)

– More than 20-year data retention

• Efficient “Continuous Read Mode”

– Low Instruction overhead

– Continuous Read with 8/16/32/64-Byte Wrap

– As few as 8 clocks to address memory

– Allows true XIP (execute in place) operation

– Outperforms X16 Parallel Flash

• Low Power, Wide Temperature Range

– Single 2.7 to 3.6V supply

– 4mA active current, <1µA Power-down current

– -40°C to +85°C operating range

• Flexible Architecture with 4KB sectors

– Uniform Sector Erase (4K-bytes)

– Uniform Block Erase (32K and 64K-bytes)

– Program one to 256 bytes

– Erase/Program Suspend & Resume

• Advanced Security Features

– Software and Hardware Write-Protect

– Top/Bottom, 4KB complement array protection

– Lock-Down and OTP array protection

– 64-Bit Unique Serial Number for each device

– Discoverable Parameters (SFDP) Register

– 3X256-Byte Security Registers with OTP locks

– Volatile & Non-volatile Status Register Bits

• Space Efficient Packaging

– 8-pin SOIC 150(2)/208-mil

– 8-pad WSON 6x5-mm

– 8-pin PDIP 300-mil

– Contact Winbond for KGD and other options

Note 1. More than 100,000 Block Erase/Program cycles for Industrial and Automotive temperature; more than 10,000

full chip Erase/Program cycles tested in compliance with AEC-Q100.

2. SOIC-8 150mil is a special order package, please contact Winbond for ordering information.

Publication Release Date: October 06, 2010

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Revision D

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