W29C020CP12B 查看數據表（PDF） - Winbond

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W29C020CP12B

256K X 8 CMOS FLASH MEMORY

Winbond 

W29C020C

DC CHARACTERISTICS

Absolute Maximum Ratings

PARAMETER

Power Supply Voltage to VSS Potential

Operating Temperature

Storage Temperature

D.C. Voltage on Any Pin to Ground Potential Except A9

Transient Voltage (<20 nS) on Any Pin to Ground Potential

Voltage on A9 and OE Pin to Ground Potential

RATING

-0.5 to +7.0

0 to +70

-65 to +150

-0.5 to VDD +1.0

-1.0 to VDD +1.0

-0.5 to 12.5

UNIT

V

°C

°C

V

V

V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability

of the device.

Operating Characteristics

(VDD = 5.0V ±10%, VSS = 0V, TA = 0 to 70° C)

PARAMETER

SYM.

TEST CONDITIONS

Power Supply Current

Standby VDD Current

(TTL input)

Standby VDD Current

(CMOS input)

Input Leakage Current

Output Leakage Current

Input Low Voltage

Input High Voltage

Output Low Voltage

Output High Voltage

Output High Voltage

CMOS

ICC

ISB1

ISB2

CE = OE = VIL, WE = VIH,

all DQs open

Address inputs = VIL/VIH,

at f = 5 MHz

CE = VIH, all DQs open

Other inputs = VIL/VIH

CE = VDD -0.3V, all DQs open

ILI

ILO

VIL

VIH

VOL

VOH1

VOH2

VIN = GND to VDD

VIN = GND to VDD

-

-

IOL = 2.0 mA

IOH = -400 µA

IOH = -100 µA; VCC = 4.5V

LIMITS

UNIT

MIN.

-

TYP. MAX.

-

50 mA

-

2

3 mA

-

20

100 µA

-

-

10 µA

-

-

10 µA

-

-

0.8 V

2.0

-

-

V

-

-

0.45 V

2.4

-

-

V

4.2

-

-

V

- 10 -

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