W29C020CP70B 查看數據表（PDF） - Winbond

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W29C020CP70B

256K X 8 CMOS FLASH MEMORY

Winbond 

W29C020C

Power-up Timing

PARAMETER

Power-up to Read Operation

Power-up to Write Operation

CAPACITANCE

(VDD = 5.0V, TA = 25° C, f = 1 MHz)

PARAMETER

DQ Pin Capacitance

Input Pin Capacitance

SYMBOL

CDQ

CIN

SYMBOL

TPU. READ

TPU. WRITE

CONDITIONS

VDQ = 0V

VIN = 0V

TYPICAL

100

5

UNIT

µS

mS

MAX.

12

6

UNIT

pF

pF

AC CHARACTERISTICS

AC Test Conditions

(VDD = 5.0V ±10% for 90 nS and 120 nS; VDD = 5.0V ±5% for 70 nS)

PARAMETER

Input Pulse Levels

Input Rise/Fall Time

Input/Output Timing Level

Output Load

CONDITIONS

0V to 3V

<5 nS

1.5V/1.5V

1 TTL Gate and CL = 100 pF for 90/120 nS

CL = 30 pF for 70 nS

AC Test Load and Waveform

+5V

D OUT

100 pF for 90/120 nS

30 pF for 70 nS

(Including Jig and Scope)

1.8KΩ

1.3KΩ

Input

3V

0V

Output

1.5V 1.5V

Test Point

Test Point

- 11 -

Publication Release Date: December 2000

Revision A3

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