WCMC1616V9X 查看數據表（PDF） - Weida Semiconductor, Inc.
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WCMC1616V9X Datasheet PDF : 13 Pages
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ADVANCE INFORMATION
DC Electrical Characteristics (Over the Operating Range)
WCMC1616V9X
Parameter
Vcc
VOH
VOL
VIH
VI L
IIX
IO Z
ICC
ISB1
ISB2
Description
Test Conditions
WCMC1616V9X-70
Min.
Typ. [8]
Max.
Supply Voltage
2.7
3.3
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
IOH = −1 mA
IOL = 2 mA
F=0
VCC - 0.4
0.8*VCC
−0.4
0.4
VCC + 0.4
0.4
Input Leakage Current
GND < VI < Vcc
−1
+1
Output Leakage Current GND < VO < Vcc, Output Disabled −1
+1
VCC Operating Supply
Current
f = fMAX = 1/tRC
f = 1 MHz
Vcc = 3.3V,
IOUT = 0mA,
CMOS level
13
17
2
3.5
Automatic CE Power-down
Current − CMOS Inputs
CE > VCCQ − 0.2V, CE2 < 0.2V
VIN > VCCQ − 0.2V, VIN < 0.2V,
f = fMAX(Address and Data Only),
f = 0 (OE, WE, BHE and BLE)
100
525
Automatic CE Power-down
Current − CMOS Inputs
CE > VCCQ − 0.2V, CE2 < 0.2V
VIN > VCCQ − 0.2V or VIN < 0.2V,
f = 0, VCC =3.3V
80
150
Capacitance [10]
Unit
V
V
V
V
V
µA
µA
mA
µA
µA
Parameter
CIN
COUT
Description
Test Conditions
Max.
Unit
Input Capacitance
TA = 25°C, f = 1 MHz
8
pF
Output Capacitance
VCC = VCC(typ)
8
pF
Thermal Resistance[10]
Parameter
θJ A
θJC
Description
Thermal Resistance (Junction to
Ambient)
Thermal Resistance (Junction to
Case)
Test Conditions
Still Air, soldered on a 3 x 4.5 inch, two-layer
printed circuit board
FBGA
55
17
Unit
°C/W
°C/W
Note:
10. Tested initially and after design or process changes that may affect these parameters.
Document #: 38-14027 Rev. **
Page 4 of 13
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