WEDPNF8M721V-1012BM 查看數據表（PDF） - Unspecified

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WEDPNF8M721V-1012BM

8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package

Unspecified 

WEDPNF8M721V-XBX

8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module

Multi-Chip Package ADVANCED*

FEATURES

n Package:

• 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm

n Commercial, Industrial and Military Temperature Ranges

n Weight:

• WEDPNF8M721V-XBX - 2.5 grams typical

SDRAM PERFORMANCE FEATURES

n Organized as 8M x 72

n High Frequency = 100, 125MHz

n Single 3.3V ±0.3V power supply

n Fully Synchronous; all signals registered on positive

edge of system clock cycle

n Internal pipelined operation; column address can be

changed every clock cycle

n Internal banks for hiding row access/precharge

n Programmable Burst length 1,2,4,8 or full page

n 4096 refresh cycles

FL ASH PERFORMANCE FEATURES

n User Configurable as 1Mx8 or 512Kx16

n Access Times of 100, 120, 150ns

n 3.3 Volt for Read and Write Operations

n 1,000,000 Erase/Program Cycles

n Sector Architecture

• One 16KByte, two 8KBytes, one 32KByte, and fif

teen 64KBytes in byte mode

• One 8K word, two 4K words, one 16K word, and

fifteen 32K word sectors in word mode.

• Any combination of sectors can be concurrently

erased. Also supports full chip erase

n Boot Code Sector Architecture (Bottom)

n Embedded Erase and Program Algorithms

n Erase Suspend/Resume

• Supports reading data from or programing data to a

sector not being erased

BENEFITS

n 42% SPACE SAVINGS

n Reduced part count

n Reduced I/O count

• 14% I/O Reduction

n Suitable for hi-reliability applications

n SDRAM Upgradeable to 16M x 72 density (contact

factory for information)

n Flash upgradeable to 2M x 8 (or 1M x 16 or 512K x 32)

density

* This data sheet describes a product that may or may not be under

development and is subject to change or cancellation without notice.

January 2002 Rev. 2

1

White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

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