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WFF840 查看數據表(PDF) - Wisdom technologies

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WFF840
WISDOM
Wisdom technologies WISDOM
WFF840 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500 --
BVDSS Breakdown Voltage Temperature
/ TJ Coefficient
ID = 250 µA, Referenced to 25°C -- 0.50
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
2.0 --
4.0
V
VGS = 10 V, ID = 4.0 A
-- 0.70 0.85
VDS = 40 V, ID = 4.0 A (Note 4) --
7.0
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1570 2040 pF
-- 150 195
pF
--
15
20
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 8.0 A,
RG = 25
--
25
60
ns
--
75 160
ns
-- 125 260
ns
(Note 4, 5)
--
75 160
ns
VDS = 400 V, ID = 8.0A,
--
38
50
nC
VGS = 10 V
--
8
--
nC
(Note 4, 5) --
13
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
8.0
A
--
--
32
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 8.0 A
--
--
1.5
V
trr
Reverse Recovery Time
VGS = 0 V, IS = 8.0 A,
-- 270
--
ns
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
(Note 4)
--
1.89
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, IAS = 8.0A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD 8.0A, di/dt 300µA/s, VDD BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width 300µs, Duty cycle 2%
5. Essentially independent of operating temperature

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