WFF840 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFF840 Datasheet PDF : 7 Pages
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WFF840
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
-
Gate−source breakdown voltage V(BR)GSS IG = ±10 μA, VDS = 0 V
±30
Drain cut−off current
IDSS
VDS = 400 V, VGS = 0 V
-
Drain−source breakdown voltage V(BR)DSS ID = 250 μA, VGS = 0 V
500
Break Voltage Temperature
Coefficient
ΔBVDSS/
ID=250μA, Referenced to 25℃
-
ΔTJ
Gate threshold voltage
VGS(th) VDS = 10 V, ID =250 μA
2
Drain−source ON resistance
RDS(ON) VGS = 10 V, ID =4.0A
-
Forward Transconductance
gfs
VDS = 40 V, ID =4.0A
-
Input capacitance
Ciss
VDS = 25 V,
-
Reverse transfer capacitance
Crss
VGS = 0 V,
-
Output capacitance
Coss
f = 1 MHz
-
Rise time
tr
VDD =250 V,
-
Switching
Turn−on time
ton
ID =8 A
-
time
Fall time
tf
RG=9.1 Ω
-
Turn−off time
toff
RD=31 Ω
(Note4,5)
-
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Qg
VDD = 400 V,
VGS = 10 V,
Qgs
ID =8 A
Qgd
-
-
(Note4,5)
-
Type
-
-
-
-
0.5
-
0.65
7.3
1400
34
145
22
65
125
75
59
7
28
Max
±100
-
10
-
Unit
nA
V
μA
V
-
V/℃
4
V
0.80
Ω
-
S
1800
44
pF
190
55
140
ns
260
160
70
nC
9
32
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
Test Condition
IDR
-
IDRP
-
VDSF
IDR = 8 A, VGS = 0 V
trr
IDR = 8A, VGS = 0 V,
Qrr
dIDR / dt = 100 A / μs
Min Type Max Unit
-
-
8
A
-
-
32
A
-
-
1.4
V
-
390
-
ns
-
4.2
-
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=9mH,IAS=8A,VDD=50V,RG=25Ω,Starting TJ=25℃
3.ISD≤8A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
.
Steady, keep you advance
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