WFP70N06T 查看數據表（PDF） - Unspecified
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WFP70N06T Datasheet PDF : 7 Pages
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Electrical Characteristics(Tc=25℃)
WFP70N06T
Characteristics
Symbol
Test Condition Min Typ Max Unit
Gate leakage current
IGSS
VGS=±20V,VDS=0V
-
-
±100 nA
Drain cut -off current
VDS=48V,VGS=0V
-
IDSS
VDS=48V,VGS=0V,TJ=125℃
-
1
µA
100
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
ID=250 µA,VGS=0V
△BVDSS/△ ID=250µA,Referenced to
TJ
25℃
60
-
-
V
- 0.066
-
V/℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2.0
-
4.0
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=35A
-
-
18 mΩ
Input capacitance
Ciss
VDS=25V,
- 1088
Reverse transfer capacitance
Output capacitance
Crss
Coss
VGS=0V,
f=1MHz
-
67
pF
-
158
Rise time
tr
VDD=30V,
-
45.1
Turn-in Delay time
Td(on) ID=1A
-
8.7
Switching time Fall time
tf
VG=10V
-
6.8
ns
Turn-off Delay time
Td(off)
RG=50Ω
-
25.6
(Note4,5)
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=30V,
Qg
VGS=10V,
Qgs
ID=1A
-
20
-
7
nC
-
Gate-drain("miller") Charge
Qgd
(Note4,5)
-
6.8
-
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
Integral Reverse p-n Junction
-
-
68
A
Pulse drain reverse current
IDRP
Diode in the MOSFET
-
-
280
A
Forward voltage(diode)
VDSF
IDR=50A,VGS=0V
-
-
1.2
V
Reverse recovery time
Reverse recovery charge
trr
IDR=68A,VGS=0V,
Qrr
dIDR / dt =100 A / µs
-
62
-
ns
-
110
-
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=250uH IAS=68A,VDD=25V,RG=0Ω,Starting TJ=25℃
3.ISD≤68A,di/dt≤300A/us,VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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