WFP730 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP730 Datasheet PDF : 7 Pages
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WFP730
Silicon N-Channel MOSFET
Features
■5.5A,400V, RDS(on)(Max 1.0Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche characteristics. This devices is specially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Channel Temperature
*Drain current limited by junction temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
400
5.5
2.9
22
±30
330
7.4
4
74
0.59
-55~150
300
Thermal Characteristics
Symbol
Parameter
Min
RQJC
Thermal Resistance, Junction-to-Case
-
RQCS
Thermal Resistance, Case-to-Sink
-
RQJA
Thermal Resistance, Junction-to-Ambient
-
Value
Typ
-
0.5
-
Max
1.7
-
62.5
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Rev.C Nov.2008
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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