WFP3205T 查看數據表（PDF） - Shenzhen Winsemi Microelectronics Co., Ltd
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WFP3205T Datasheet PDF : 7 Pages
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Electrical Characteristics(Tc=25℃)
WFP3205T
Characteristics
Symbol Test Condition Min Typ Max Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
-
-
±100 nA
Gate-source breakdown voltage
V(BR)GSS IG=±10 µA,VDS=0V
±30
-
-
V
Drain cut -off current
VDS=55V,VGS=0V
-
IDSS
VDS=44V,VGS=0V,TJ=125℃
-
-
1
µA
-
100 µA
Drain -source breakdown voltage
Breakdown voltage Temperature
Coefficient
V(BR)DSS
△BVDSS/
△TJ
ID=250 µA,VGS=0V
ID=1mA,
Referenced to 25℃
60
-
-
V
- 0.057
-
V/℃
Gate threshold voltage
VGS(th)
VDS=VGS,ID=250 µA
2
-
4
V
Drain -source ON resistance
RDS(ON)
VGS=10V,ID=55A
-
-
8.0 mΩ
Forward Transconductance
gfs
VDS=25V,ID=55A
44
-
-
S
Input capacitance
Reverse transfer capacitance
Output capacitance
Ciss
Crss
Coss
VDS=25V,
VGS=0V,
f=1MHz
-
3395
-
-
150
-
pF
-
435
-
Rise time
Turn-in Delay time
Switching time
Fall time
Turn-off Delay time
tr
Td(on)
tf
Td(off)
VDD=28V,
ID=55A
RG=2.5Ω
VGS=10V (Note4,5)
-
43
-
-
14
-
ns
-
11
-
-
31
-
Total gate charge(gate-source
plus gate-drain)
Gate-source charge
VDD=44V,
Qg
ID=55A
Qgs
VGS=10V,
-
50
nC
-
21
Gate-drain("miller") Charge
Qgd
(Note4,5)
-
14
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
IDR
-
-
-
109
A
Pulse drain reverse current
IDRP
-
-
-
390
A
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
VDSF
trr
Qrr
IDR=60A,VGS=0V
IDR=55A,TJ=25℃
dIDR / dt =100 A / µs
-
-
1.2
V
-
100
170
ns
-
450
680
µC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=198uH IAS=55A,,RG=25Ω,Starting TJ=25℃
3.ISD≤55A,di/dt≤290A/us,VDD<BVDSS, TJ≤150℃
4.Pulse Test:Pulse Width≤400us,Duty Cycle≤2%
5. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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