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WS57C128 查看數據表(PDF) - STMicroelectronics

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产品描述 (功能)
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WS57C128
ST-Microelectronics
STMicroelectronics ST-Microelectronics
WS57C128 Datasheet PDF : 5 Pages
1 2 3 4 5
WS57C128FB
PROGRAMMING INFORMATION
DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
MAX
UNITS
ILI
Input Leakage Current
(VIN = VCC or Gnd)
IPP
VPP Supply Current During
Programming Pulse (CE = PGM = VIL)
ICC
VCC Supply Current
VOL
Output Low Voltage During Verify
(IOL = 16 mA)
VOH
Output High Voltage During Verify
(IOH = –4 mA)
–10
10
µA
60
mA
30
mA
0.4
V
2.4
V
NOTE: 9. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP.
10. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to
12.5 volts or vice-versa.
11. During power up the PGM pin must be brought high (VIH) either coincident with or before power is applied to VPP.
AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V)
SYMBOLS
PARAMETER
MIN
TYP
MAX
UNITS
t AS
t CES
t OES
t OS
t AH
t OH
t DF
t OE
t VS
t PW
Address Setup Time
2
Chip Enable Setup Time
2
Output Enable Setup Time
2
Data Setup Time
2
Address Hold Time
0
Data Hold Time
2
Chip Disable to Output Float Delay
0
Data Valid From Output Enable
VPP Setup Time
2
PGM Pulse Width
100
µs
µs
µs
µs
µs
µs
130
ns
130
ns
µs
200
µs
PROGRAMMING WAVEFORM
ADDRESSES
DATA
VPP
VPP
VCC
VIH
CE
VIL
VIH
PGM
VIL
VIH
OE
VIL
ADDRESS STABLE
tAS
DATA IN STABLE
HIGH Z
tOS
tOH
tOE
tAH
DATA OUT
VALID
tDF
tVS
tCES
tPW
tOES
3-10

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