HAL320SO-E 查看數據表（PDF） - Micronas
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HAL320SO-E Datasheet PDF : 13 Pages
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HAL320
Electrical Characteristics at TJ = –40 °C to +170 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
Symbol
IDD
IDD
VDDZ
VOZ
Parameter
Pin No. Min.
Supply Current
1
2.8
Supply Current over
Temperature Range
1
1.8
Overvoltage Protection
at Supply
1
–
Overvoltage Protection at Output 3
–
VOL
Output Voltage
3
–
VOL
Output Voltage over
Temperature Range
3
–
VOL
Output Voltage over
Temperature Range
3
–
IOH
Output Leakage Current
3
–
IOH
Output Leakage Current over
3
–
Temperature Range
fosc
Internal Oscillator
Chopper Frequency
–
42
fosc
Internal Oscillator Chopper Fre- –
40
quency over Temperature Range
ten(O)
Enable Time of Output
after Setting of VDD
3
–
tr
Output Rise Time
3
–
tf
Output Fall Time
3
–
RthJSB
Thermal Resistance Junction to
–
case
Substrate Backside
SOT-89A,
SOT-89B
RthJS
Thermal Resistance
–
case
Junction to Soldering Point
TO-92UA
Typ.
4.7
4.7
28.5
28
170
170
210
–
–
62
62
35
80
50
150
150
Max.
Unit
6.8
mA
7.5
mA
32.5
V
32.5
V
250
mV
400
mV
500
mV
1
µA
10
µA
75
kHz
80
kHz
–
µs
400
ns
400
ns
200
K/W
200
K/W
Conditions
TJ = 25 °C
IDD = 25 mA, TJ = 25 °C,
t = 20 ms
IOH = 25 mA, TJ = 25 °C,
t = 20 ms
VDD = 12 V, IO = 20 mA,
TJ = 25 °C
IO = 20 mA
IO = 25 mA
VOH = 4.5 V... 24 V,
DB < DBOFF , TJ = 25 °C
VOH = 4.5 V... 24 V,
DB < DBOFF , TJ ≤ 150 °C
TJ = 25 °C
VDD = 12 V,
DB > DBON + 2mT or
DB < DBOFF – 2mT
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
VDD = 12 V, RL = 820 Ω,
CL = 20 pF
Fiberglass Substrate
30 mm x 10 mm x 1.5mm,
pad size see Fig. 8
6
Micronas
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