XC6802A42X1EL 查看數據表（PDF） - TOREX SEMICONDUCTOR
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XC6802A42X1EL
TOREX SEMICONDUCTOR
XC6802A42X1EL Datasheet PDF : 18 Pages
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XC6802 Series
■ELECTRICAL CHARACTERISTICS
XC6802A42x
PARAMETER
SYMBOL
CONDITIONS
MIN TYP
Input Voltage
Supply Current
Stand-by Current
Shut-down Current
Float Voltage 1
Float Voltage 2 (*1)
Maximum Battery Current (*2)
Battery Current 1
Battery Current 2
Battery Current 3
Battery Current 4
Battery Current 5
Trickle Charge Current 1
Trickle Charge Current 2
Trickle Voltage
Trickle Voltage
Hysteresis Width
UVLO Volatge
UVLO Hysteresis Width
Manual Shut-down Voltage
Manual Shut-down Voltage
Hysteresis Width
VIN-VBAT
Shut-down Release Voltage
VIN-VBAT Shut-down Voltage
Hysteresis Width
C/10 Charge Termination
Current Threshold 1
C/10 Charge Termination
Current Threshold 2
ISEN Pin Voltage
/CHG Pin
Weak Pull-Down Current
/CHG Pin
Strong Pull-Down Current
/CHG Pin
Output LOW Voltage
Recharge Battery
Threshold Voltage
ON Resistance
Soft-Start Time
Recharge Battery Time
Battery Termination
Detect Time
VIN
ISS
ISTBY
ISHUT
VFLOAT1
VFLOAT2
IBATMAX
IBAT1
IBAT2
IBAT3
IBAT4
IBAT5
ITRIKL1
ITRIKL2
VTRIKL
4.25
Charge mode, RSEN=10kΩ
-
Stand-by mode
-
Shut-down mode
-
(RSEN=NC, VIN<VBAT or VIN<VUVLO）
TA=25℃, IBAT=40mA
×0.993
0℃≦TA≦50℃, IBAT=40mA
×0.99
RSEN=10kΩ, CC mode
RSEN=2kΩ, CC mode
Stand-by mode, VBAT=4.2V
Shut-down mode (RSEN=NC)
Sleep mode, VIN=0V
VBAT<VTRIKL, RSEN=10kΩ
VBAT<VTRIKL, RSEN=2kΩ
RSEN=10kΩ, VBAT Rising
93
465
-
-
-
6
30
2.913
VTRIKL_HYS
-
58
VUVLO
VUVLO_HYS
VSD
VSD_HYS
ＶIN: L → H
-
ISEN: L → H
-
3.686
150
1.4
-
VASD
ＶIN: L → H
70
VASD_HYS
-
-
ITERM1
RSEN=10kΩ
0.07
ITERM2
VISEN
I/CHG1
RSEN=2kΩ
RSEN=10kΩ, CC mode
VBAT=4.3, V/CHG=5V
0.07
-
8
I/CHG2
VBAT=4.0V, V/CHG=1V
4
V/CHG
I/CHG＝5mA
-
ΔVRECHRG
VFLOAT1-VRECHRG
100
RON
IBAT=100mA
-
tSS
100
tRECHRG
0.4
tTERM
IBAT falling (less than charge
current /10)
0.3
-
15
15
10
4.2
4.2
100
500
-
-
-
10
50
2.9
90
3.8
190
-
100
100
70
0.10
0.10
1.0
20
10
0.35
150
450
150
2
1
Current Sense Pin
Pull-Up Current
ISEN_pull_up
-
-
1.3
Thermal Shut-Down
Detect Temperature
Thermal Shut-Down
Release Temperature
TTSD
TTSR
Junction temperature
Junction temperature
-
115
-
95
* Unless otherwise stated, VIN=5.0V.
NOTE: *1: The figures under the condition of 0OC≦TA≦50OC are guaranteed by design calculation.
*2: When the RSEN resistance is set, the battery current shall not be exceeded to 800mA.
4/18
MAX
6.0
35
35
UNIT
V
μA
μA
Ta=25℃
CIRCUIT
-
③
③
23
μA
③
×1.007 V
②
×1.01
V
-
800
mA
-
107 mA
③
523 mA
③
2
μA
③
1
μA
⑤
1
μA
③
14
mA
③
70
mA
③
2.987
V
③
116
mV
③
3.914
V
③
280
mV
③
-
V
①
-
mV
①
140
mV
③
-
mV
③
0.13 mA/mA ②
0.13 mA/mA ②
-
V
③
50
μA
③
20
mA
③
0.7
V
④
200
mV
③
900
mΩ
①
200
μs
⑥
4
ms
②
3.5
ms
②
-
μA
①
-
℃
-
-
℃
-
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