Z0110SA5AL2 查看數據表（PDF） - STMicroelectronics
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Z0110SA5AL2 Datasheet PDF : 9 Pages
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Z01
Characteristcs
Figure 1.
Maximum power dissipation
versus RMS on-state current
(full cycle)
Figure 2.
RMS on-state current versus lead
(TO-92) or tab (SOT-223)
temperature (full cycle)
P(W)
1.50
1.25
1.00
0.75
0.50
0.25
IT(RMS)(A)
0.00
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
IT(RMS)(A)
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
Rth(j-a) = Rth(j-t)
(SOT-223)
Rth(j-a) = Rth(j-l)
(TO-92)
Tl or Ttab(°C)
50
75
100
125
Figure 3. RMS on-state current versus
ambient temperature (full cycle)
Figure 4. Relative variation of thermal
impedance versus pulse duration
IT(RMS)(A)
1.2
1.0
Rth(j-a) = 60°C/W
(SOT-223)
0.8
0.6
0.4
Rth(j-a) = 150°C/W
(TO-92)
0.2
Tamb (°C)
0.0
0
25
50
75
100
125
K=[Zth(j-a)/Rth(j-a)]
1.00
0.10
Z01xxA
Z01xxN
0.01
1E-3
1E-2
tp(s)
1E-1
1E+0
1E+1
1E+2 5E+2
Figure 5.
Relative variation of gate trigger
current, holding current and
latching current versus junction
temperature (typical values)
Figure 6. Surge peak on-state current versus
number of cycles
IGT, IH, IL [Tj] / IGT, IH, IL [Tj=25°C]
2.5
2.0
1.5
IGT
1.0
IH & IL
0.5
Tj (°C)
0.0
-40 -20
0
20 40 60 80 100 120 140
ITSM (A)
9
8
7
6
5
4
Repetitive
3
Tamb = 25°C
2
1
0
1
Non repetitive
Tj initial = 25°C
Number of cycles
10
100
t=20ms
One cycle
1000
3/9
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