L6201(1997) 查看數據表（PDF） - STMicroelectronics

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L6201
(Rev.:1997)

DMOS FULL BRIDGE DRIVER

STMicroelectronics 

L6201 - L6202 - L6203

CIRCUIT DESCRIPTION

The L6201/1PS/2/3 is a monolithic full bridge

switching motor driver realized in the new Mul-

tipower-BCD technology which allows the integra-

tion of multiple, isolated DMOS power transistors

plus mixed CMOS/bipolar control circuits. In this

way it has been possible to make all the control

inputs TTL, CMOS and µC compatible and elimi-

nate the necessity of external MOS drive compo-

nents. The Logic Drive is shown in table 1.

Figure 15: Current Typical Spikes on the Sens-

ing Pin

Table 1

Inputs

IN1

L

VEN = H

L

H

H

VEN = L

X

IN2

Output Mosfets (*)

L Sink 1, Sink 2

H Sink 1, Source 2

L Source 1, Sink 2

H Source 1, Source 2

X All transistors turned oFF

L = Low

H = High

X = DON’t care

(*) Numbers referred to INPUT1 or INPUT2 controlled output stages

Although the device guarantees the absence of

cross-conduction, the presence of the intrinsic di-

odes in the POWER DMOS structure causes the

generation of current spikes on the sensing termi-

nals. This is due to charge-discharge phenomena

in the capacitors C1 & C2 associated with the

drain source junctions (fig. 14). When the output

switches from high to low, a current spike is gen-

erated associated with the capacitor C1. On the

low-to-high transition a spike of the same polarity

is generated by C2, preceded by a spike of the

opposite polarity due to the charging of the input

capacity of the lower POWER DMOS transistor

(fig. 15).

Figure 14: Intrinsic Structures in the POWER

DMOS Transistors

TRANSISTOR OPERATION

ON State

When one of the POWER DMOS transistor is ON

it can be considered as a resistor RDS (ON)

throughout the recommended operating range. In

this condition the dissipated power is given by :

PON = RDS (ON) ⋅ IDS2 (RMS)

The low RDS (ON) of the Multipower-BCD process

can provide high currents with low power dissipa-

tion.

OFF State

When one of the POWER DMOS transistor is

OFF the VDS voltage is equal to the supply volt-

age and only the leakage current IDSS flows. The

power dissipation during this period is given by :

POFF = VS ⋅ IDSS

The power dissipation is very low and is negligible

in comparison to that dissipated in the ON

STATE.

Transitions

As already seen above the transistors have an in-

trinsic diode between their source and drain that

can operate as a fast freewheeling diode in

switched mode applications. During recirculation

with the ENABLE input high, the voltage drop

across the transistor is RDS (ON) ⋅ ID and when it

reaches the diode forward voltage it is clamped.

When the ENABLE input is low, the POWER

MOS is OFF and the diode carries all of the recir-

culation current. The power dissipated in the tran-

sitional times in the cycle depends upon the volt-

age-current waveforms and in the driving mode.

(see Fig. 7ab and Fig. 8abc).

Ptrans. = IDS (t) ⋅ VDS (t)

10/20

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