L6201(1997) 查看數據表（PDF） - STMicroelectronics

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L6201
(Rev.:1997)

DMOS FULL BRIDGE DRIVER

STMicroelectronics 

L6201 - L6202 - L6203

THERMAL DATA

Symbol

Parameter

Rth j-pins

Rth j-case

Rth j-amb

Thermal Resistance Junction-pins

Thermal Resistance Junction Case

Thermal Resistance Junction-ambient

max

max.

max.

L6201

15

–

85

Value

L6201PS L6202

–

12

–

–

13 (*)

60

L6203

–

3

35

Unit

°C/W

(*) Mounted on aluminium substrate.

ELECTRICAL CHARACTERISTICS (Refer to the Test Circuits; Tj = 25°C, VS = 42V, Vsens = 0, unless

otherwise specified).

Symbol

Vs

Vref

IREF

Is

Parameter

Supply Voltage

Reference Voltage

Output Current

Quiescent Supply Current

fc

Commutation Frequency (*)

Tj

Thermal Shutdown

Td

Dead Time Protection

TRANSISTORS

Test Conditions

IREF = 2mA

EN = H VIN = L

EN = H VIN = H

EN = L ( Fig. 1,2,3)

IL = 0

Min. Typ. Max. Unit

12

36

48

V

13.5

V

2

mA

10

15

mA

10

15

mA

8

15

mA

30

100 KHz

150

°C

100

ns

OFF

IDSS

ON

RDS

VDS(ON)

Leakage Current

On Resistance

Drain Source Voltage

Vsens

Sensing Voltage

SOURCE DRAIN DIODE

Fig. 11 Vs = 52 V

1

mA

Fig. 4,5

Fig. 9

IDS = 1A

IDS = 1.2A

IDS = 3A

0.3 0.55

Ω

L6201

0.3

V

L6202

0.36

V

L6201PS/0

0.9

V

3

–1

4

V

Vsd

Forward ON Voltage

Fig. 6a and b

ISD = 1A L6201

EN = L

0.9 (**)

V

ISD = 1.2A L6202

EN = L

0.9 (**)

V

ISD = 3A L6201PS/03 EN =

1.35(**)

V

L

trr

Reverse Recovery Time

dif

dt

=

25

A/µs

300

ns

IF = 1A

IF = 1.2A

IF = 3A

L6201

L6202

L6203

tfr

Forward Recovery Time

200

ns

LOGIC LEVELS

VIN L, VEN L

VIN H, VEN H

IIN L, IEN L

IIN H, IEN H

Input Low Voltage

Input High Voltage

Input Low Current

Input High Current

VIN, VEN = L

VIN, VEN = H

– 0.3

0.8

V

2

7

V

–10

µA

30

µA

4/20

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