T1048 查看數據表（PDF） - Diodes Incorporated.

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T1048

SM-8 Dual NPN medium power high gain transistors

Diodes Incorporated. 

ZDT1048

Absolute maximum ratings

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Base current

Operating and storage temperature range

Symbol

VCBO

VCEO

VEBO

ICM

IC

IB

Tj:Tstg

Value

50

17.5

5

20

5

500

-55 to +150

Unit

V

V

V

A

A

mA

°C

Thermal Characteristics

Parameter

Total power dissipation at Tamb = 25°C*

Any single die “on”

Both die “on” equally

Derate above 25°C*

Any single die “on”

Both die “on” equally

Thermal resistance - junction to ambient*

Any single die “on”

Both die “on” equally

Symbol

Ptot

Value

2.25

2.75

18

22

55.6

45.5

Unit

W

W

V

mW/°C

mW/°C

°C/W

°C/W

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to

2 inches square.

Issue 2 - December 2007

2

© Zetex Semiconductors plc 2007

www.zetex.com

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