T1048 查看數據表（PDF） - Diodes Incorporated.

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T1048

SM-8 Dual NPN medium power high gain transistors

Diodes Incorporated. 

ZDT1048

Electrical characteristics (at Tamb = 25°C unless otherwise stated).

Parameter

Symbol Min. Typ. Max. Unit Conditions

Collector-base breakdown V(BR)CBO 50

85

voltage

V IC=100µA

Collector-emitter

breakdown voltage

VCES

50

85

V IC=100µA

Collector-emitter

breakdown voltage

VCEO

17.5 24

V IC=10mA

Collector-emitter

breakdown voltage

VCEV

50

85

V IC=100µA, VEB=1V

Emitter-base breakdown V(BR)EBO 5

8.7

voltage

V IE=100µA

Collector cut-off current ICBO

0.3

10

nA VCB=35V

Emitter cut-off current

IEBO

0.3

10

nA VEB=4V

Collector-emitter cut-off ICES

current

0.3

10

nA ICES=35V

Collector-emitter

saturation voltage

VCE(sat)

27

45

mV IC=0.5A, IB=10mA (*)

55

75

mV IC=1A, IB=10mA(*)

120

160

mV IC=2A, IB=10mA(*)

200

240

mV IC=5A, IB=100mA(*)

200

300

mV IC=5A, IB=50mA(*)

Base-emitter saturation

voltage

VBE(sat)

1000 1100 mV IC=5A, IB=100mA(*)

Base-emitter turn on

voltage

VBE(on)

900 1000 mV IC=5A, VCE=2V(*)

Static forward

current transfer

ratio

hFE

280 440

300

450 1200

300 450

250 300

50

80

IC=10mA, VCE=2V(*)

IC=0.5A, VCE=2V(*)

IC=1A, VCE=2V(*)

IC=5A, VCE=2V(*)

IC=20A, VCE=2V(*)

Transition frequency

fT

150

MHz IC=50mA, VCE=10V

f=50MHz

Output capacitance

Cobo

60

80

pF VCB=10V, f=1MHz

Switching times

ton

120

ns IC=4A, IB=40mA,VCC=10V

toff

250

ns IC=4A, IB=±40mA,VCC=10V

NOTES:

(*) Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Issue 2 - December 2007

3

© Zetex Semiconductors plc 2007

www.zetex.com

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