¡ Semiconductor
MSM6794
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol Condition
Rating
Unit Applicable Pins
Supply voltage
Bias voltage
Voltage multiplication
reference voltage
Input voltage
Power dissipation
Storage temperature
VDD
Ta=25˚C,
–0.3 to +7
V
VDD1-4–VSS1-3
VBI Ta=25˚C,V1–V6 –0.3 to +14
V
VIN
VIN–VSS1-3 *2
VIN–VSS1-3 *3
–0.3 to +7
–0.3 to +4.6
V
VI
Ta=25˚C –0.3 to VDD+0.3 V
PD
—
*1
mW
TSTG
—
–55 to +150
˚C
VDD1-4, VSS1-3
V1, V6
VIN, VSS1-3
All Inputs
—
—
Ta : ambient temperature
*1 Power dissipation depends on the heat radiation in a device attach condition. Set junction
temperature to 150˚C or lower.
*2 Ta = 25˚C; when doubler is used.
*3 Ta = 25˚C; when tripler is used.
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply voltage
Bias voltage
Voltage multiplicatipon
reference voltage
Operating frequency
Operating temperature
Symbol
VDD
VBI
VIN
fop
Top
Condition
VDD1-4–VSS1-3
V1–V6 1
VIN–VSS1-3
See Note 1 on p.6
2
—
Range
2.7 to 5.5
5 to 12
1 to VDD
1 to 4
270 to 500
–25 to +85
Unit
V
V
V
kHz
˚C
Applicable Pins
VDD1-4, VSS1-3
V1, V6
VIN, VSS1-3
OSC1
—
1 For bias potential, V1 has the highest potential and V6 has the lowest potential. Use V6 at the
same potential as VSS1 to VSS3.
2 RC oscillation and external input clock frequency (when frequency dividing ratio is 1).
For divided frequency operation, clock frequency after dividing must be within this range.
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