ZSM380(2006) 查看數據表（PDF） - Zetex => Diodes
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ZSM380 Datasheet PDF : 5 Pages
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ZSM380
ABSOLUTE MAXIMUM RATING
Input Supply Voltage
-1 to 10V
Power Dissipation
Offstate Output Voltage 10V
TO92
780mW
Onstate Output
Sink Current(Note 1)
Internally limited
SOT223
2W(Note 2)
Clamp Diode
Forward Current(Note 1)
100mA
Operating Junction
Temperature
150°C
Operating Temperature -40 to 85°C
Storage Temperature
-55 to 150°C
TEST CONDITIONS
(Tamb=25°C for typical values, Tamb=-40 to 85°C for min/max values (Note3))
COMPARATOR
PARAMETER
SYMBOL MIN
TYP.
MAX. UNITS
Threshold Voltage
High state output (Vcc increasing)
VIH
3.7
3.81
3.9
V
Threshold Voltage
Low state output (Vcc decreasing)
VIL
Hysteresis
VH
OUPUT
3.7
3.79
3.9
V
0.01
0.02
0.05
V
Output sink saturation:
VOL
(Vcc=3.3V, Isink=8.0mA)
0.46
1.0
V
(Vcc=3.3V, Isink=2.0mA)
(Vcc=1.0V, Isink=0.1mA)
0.15
0.4
V
0.25
V
Onstate output sink current
(Vcc , Output=3.3V)
Offstate output leakage current
(Vcc , Output=5V)
Isink
10
Ioh
27
60
mA
0.02
0.5
µA
Clamp diode forward voltage
(If=10mA)
Vf
0.6
1.2
1.5
V
Propagation delay
Td
3
µs
(Vin 5V to 3.3V, Rl=10k, Tamb=25°C)
TOTAL DEVICE
Operating input voltage range
Quiescent input current (Vcc=5V)
Vcc
1.0 to 6.5
V
Iq
140
200
µA
Note:
1. Maximum package power dissipation must be observed.
2. Maximum power dissipation for the SOT223 package is calculated assuming that the device is
mounted on a PCB measuring 2 inches square.
3. Low duty cycle pulse techniques are used during test to maintain junction temperatures as
close to ambient as possible.
4-350
Issue 3 - July 2006
© Zetex Semiconductors plc 2006
www.zetex.com
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