ZVN4525Z 查看數據表（PDF） - Zetex => Diodes

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ZVN4525Z

250V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZVN4525Z

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP.

MAX. UNI CONDITIONS.

T

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS 250

285

Zero Gate Voltage Drain Current

IDSS

35

Gate-Body Leakage

IGSS

±1

Gate-Source Threshold Voltage

VGS(th)

0.8

1.4

Static Drain-Source On-State Resistance (1) RDS(on)

5.6

5.9

6.4

Forward Transconductance (3)

DYNAMIC (3)

gfs

0.3

475

500

±100

1.8

8.5

9.0

9.5

V ID=1mA, VGS=0V

nA VDS=250V, VGS=0V

nA VGS=±40V, VDS=0V

V

I =1mA,

D

VDS=

VGS

Ω VGS=10V, ID=500mA

Ω VGS=4.5V, ID=360mA

Ω VGS=2.4V, ID=20mA

S VDS=10V,ID=0.3A

Input Capacitance

Output Capacitance

Ciss

72

Coss

11

pF

VDS=25 V, VGS=0V,

pF f=1MHz

Reverse Transfer Capacitance

Crss

3.6

pF

SWITCHING(2) (3)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

1.25

1.70

11.40

3.50

2.6

0.2

0.5

3.65

0.28

0.70

ns

VDD =50V, ID=200mA

ns RG=6.0Ω, RD=4.4Ω

(refer to test circuit)

ns

ns

nC

VDS=25V,VGS=10V,

nC ID=360mA(refer to

test circuit)

nC

Diode Forward Voltage (1)

VSD

0.97

Reverse Recovery Time (3)

trr

186

260

Reverse Recovery Charge (3)

Qrr

34

48

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V Tj=25°C, IS=360mA,

VGS=0V

ns Tj=25°C, IF=360mA,

di/dt= 100A/µs

nC

ISSUE 1 - MARCH 2001

4

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