ZXM61P03 查看數據表（PDF） - Zetex => Diodes

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ZXM61P03

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM61P03F

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS -30

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th) -1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (3)

DYNAMIC (3)

gfs

0.44

V

ID=-250µA, VGS=0V

-1

µA VDS=-30V, VGS=0V

±100 nA VGS=± 20V, VDS=0V

V

ID=-250µA, VDS= VGS

0.35 Ω

0.55 Ω

VGS=-10V, ID=-0.6A

VGS=-4.5V, ID=-0.3A

S

V D S= - 10 V , I D=- 0 . 3 A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

140

pF

VDS=-25 V, VGS=0V,

45

pF f=1MHz

20

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

1.9

ns

2.9

ns VDD =-15V, ID=-0.6A

8.9

ns

RG=6.2Ω, RD=25Ω

(Refer to test circuit)

5.0

ns

4.8

0.62

1.3

nC

V D S= - 24 V , V GS= - 10 V ,

nC ID=-0.6A

(Refer to test circuit)

nC

Diode Forward Voltage (1)

VSD

-0.95 V

Tj=25°C, IS=-0.6A,

V GS= 0 V

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

14.8

7.7

ns Tj=25°C, IF=-0.6A,

di/dt= 100A/µs

nC

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

PROVISIONAL ISSUE A - JULY 1999

84

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