ZXM64P03X 查看數據表（PDF） - Zetex => Diodes

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ZXM64P03X

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXM64P03X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

V(BR)DSS

IDSS

IGSS

VGS(th)

-30

-1.0

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (3)

DYNAMIC (3)

gfs

2.3

V

-1 µA

±100 nA

V

0.075 Ω

0.100 Ω

S

ID=-250µA, VGS=0V

VDS=-30V, VGS=0V

VGS=± 20V, VDS=0V

I =-2

VDDS=

50µA,

VGS

VGS=-10V, ID=-2.4A

VGS=-4.5V, ID=-1.2A

VDS=-10V,ID=-1.2A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

825

pF

250

pF

VDS=-25 V, VGS=0V,

f=1MHz

80

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

td(on)

tr

td(off)

tf

4.4

6.2

40

29.2

ns

ns

VDD =-15V, ID=-2.4A

ns

RG=6.2Ω, RD=6.2Ω

(Refer to test

ns

circuit)

Total Gate Charge

Qg

Gate-Source Charge

Qgs

Gate Drain Charge

Qgd

46 nC

9 nC

11.5 nC

VDS=-24V,VGS=-10V,

ID=-2.4A

(Refer to test

circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

Reverse Recovery Time (3)

trr

Reverse Recovery Charge(3)

Qrr

-0.95 V

30.2

ns

27.8

nC

Tj=25°C, IS=-2.4A,

VGS=0V

Tj=25°C, IF=-2.4A,

di/dt= 100A/µs

NOTES:

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - OCTOBER 2005

4

SEMICONDUCTORS

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