ZXMN2A01FTC 查看數據表（PDF） - Zetex => Diodes

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ZXMN2A01FTC

20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN2A01F

ELECTRICAL CHARACTERISTICS (at TA = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

V(BR)DSS 20

Zero Gate Voltage Drain Current

IDSS

Gate-Body Leakage

IGSS

Gate-Source Threshold Voltage

VGS(th)

0.7

Static Drain-Source On-State Resistance RDS(on)

(1)

Forward Transconductance (1)(3)

gfs

DYNAMIC (3)

V ID=250µA, VGS=0V

1

µA VDS=20V, VGS=0V

100 nA VGS=Ϯ12V, VDS=0V

0.12

0.30

V ID=250µA, VDS= VGS

Ω VGS=4.5V, ID=4A

Ω VGS=2.5V, ID=1.5A

6.1

S VDS=10V,ID=4A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

303

pF

VDS=15 V, VGS=0V,

59

pF f=1MHz

30

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

SOURCE-DRAIN DIODE

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

2.49

5.21

7.47

4.62

3.0

0.8

1.0

ns

ns VDD =10V, ID=4A

ns RG=6.0Ω, VGS=5V

ns

nC

VDS=10V,VGS=4.5V,

nC ID=4A

nC

Diode Forward Voltage (1)

Reverse Recovery Time (3)

Reverse Recovery Charge (3)

VSD

trr

Qrr

0.9 0.95

23

5.65

V TJ=25°C, IS=3.2A,

VGS=0V

ns TJ=25°C, IF= 4A,

di/dt= 100A/µs

nC

NOTES

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤ 2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

ISSUE 1 - JULY 2002

4

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