ZXMN6A09GTC 查看數據表（PDF） - Zetex => Diodes

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ZXMN6A09GTC

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMN6A09G

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Drain-Source Voltage

Gate Source Voltage

Continuous

Drain

Current

(VGS=10V;

(VGS=10V;

(VGS=10V;

TTTAAA===272505°°°CCC)))(((bba)))

Pulsed Drain Current (c)

Continuous Source Current (Body Diode) (b)

Pulsed Source Current (Body Diode)(c)

Power Dissipation at TA=25°C (a)(d)

Linear Derating Factor

Power Dissipation at TA=25°C (b)(d)

Linear Derating Factor

Operating and Storage Temperature Range

SYMBOL

VDSS

VGS

ID

IDM

IS

ISM

PD

PD

Tj:Tstg

THERMAL RESISTANCE

LIMIT

60

Ϯ20

6.9

5.6

5.0

30.6

3.5

30.6

2.0

16

3.9

31

-55 to +150

UNIT

V

V

A

A

A

A

W

mW/°C

W

mW/°C

°C

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

Junction to Ambient (b)(d)

RθJA

RθJA

62.5

°C/W

32.2

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions

(b) For a device surface mounted on FR4 PCB measured at tр5 secs.

(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.02 pulse width=300µs - pulse width limited by maximum junction temperature.

SEMICONDUCTORS

PROVISIONAL ISSUE D - SEPTEMBER 2003

2

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