K2411-Z 查看數據表（PDF） - NEC => Renesas Technology
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K2411-Z Datasheet PDF : 8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor de-
signed for high speed switching applications.
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A)
RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A)
• Low Ciss Ciss = 1500 pF TYP.
• Built-in G-S Gate Protection Diodes
• High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document
number IEI-1209) published by NEC Corporation to know the
specification of quality grade on the devices and its recommended
applications.
PACKAGE DIMENSIONS
(in millimeter)
10.6 MAX.
10.0
3.6 ±0.2
4.8 MAX.
1.3 ±0.2
4
123
1.3 ±0.2
0.5 ±0.2
0.75 ±0.1
2.54
2.8 ±0.2
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
JEDEC: TO-220AB
MP-25 (TO-220)
(10.0)
4.8 MAX.
1.3 ±0.2
4
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
VDSS
60
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
ID(DC)
±30
A
Drain Current (pulse)*
ID(pulse)
±120
A
Total Power Dissipation (Tc = 25 ˚C) PT1
75
W
Total Power Dissipation (TA = 25 ˚C) PT2
1.5
W
Channel Temperature
Tch
150
˚C
Storage Temperature
Tstg
–55 to +150 ˚C
Single Avalanche Current**
IAS
30
A
Single Avalanche Energy**
EAS
90
mJ
* PW ≤ 10 µs, Duty Cycle ≤ 1 %
** Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
1.0 ±0.3
1.4 ±0.2
(2.54) (2.54)
123
(0.(50R.8)R)
0.5 ±0.2
MP-25Z(SURFACE MOUNT TYPE)
Drain
Gate
Body
Diode
Gate Protection
Diode
Source
The information in this document is subject to change without notice.
Document No. TC-2492
(O. D. No. TC-8030)
Date Published November 1994 P
Printed in Japan
©
1994
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