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K2411 查看數據表(PDF) - NEC => Renesas Technology

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K2411 Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2SK2411, 2SK2411-Z
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
80
70
60
50
VGS = 4 V
40
VGS = 10 V
30
20
10
0
–50 –25 0
ID = 15 A
25 50 75 100 125 150
Tch - Channel Temperature - ˚C
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10 V
VGS = 0
10
1
0
1.0
2.0
3.0
VSD - Source to Drain Voltage - V
10000
1000
100
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
Ciss
Coss
Crss
10
1
10
100
VDS - Drain to Source Voltage - V
1000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
100
10
0.1
1.0
10
100
ID - Drain Current - A
1000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td (off)
tf
tr
td (on)
VDD = 30 V
VGS = 10 V
RG = 10
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
16
ID = 30 A
70
14
VDD = 48 V
60
12
50
40
VDS
30
10
VGS
8
6
20
4
10
2
0
0 10 20 30 40 50 60 70 80
Qg - Gate Charge - nC
5

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