SPA15N60C3 查看數據表（PDF） - Inchange Semiconductor

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SPA15N60C3

N-Channel MOSFET Transistor

Inchange Semiconductor 

isc N-Channel MOSFET Transistor

INCHANGE Semiconductor

SPA15N60C3

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP MAX UNIT

BVDSS

Drain-Source Breakdown Voltage VGS=0V; ID= 250µA

600

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID=250µA

2.1

3.9

V

RDS(on)

Drain-Source On-Resistance

VGS=10V; ID=9.4A

0.28

Ω

IGSS

Gate-Source Leakage Current

VGS= 30V;VDS= 0V

10

nA

VDS=650V; VGS= 0V

IDSS

Drain-Source Leakage Current

VDS=650V; VGS= 0V;Tj=150℃

1

μA

100

VSD

Diode forward voltage

IS=15A, VGS = 0 V

1.2

V

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