MAX17030GTL-T 查看數據表（PDF） - Maxim Integrated
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MAX17030GTL-T Datasheet PDF : 40 Pages
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1/2/3-Phase Quick-PWM
IMVP-6.5 VID Controllers
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 1, VIN = 10V, VCC = VDD = V SHDN = VPGD_IN = V PSI = VILIM = 5V, VDPRSLPVR = VGNDS = 0, VCSP_ = VCSN_ =
1.0000V, FB = FBAC, RFBAC = 3.57kΩ from FBAC to CSN_, [D6–D0] = [0101000]; TA = 0°C to +85°C, unless otherwise noted.
Typical values are at TA = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
Phases 2, 3 Disable Threshold
Measured at CSP2, CSP3
3
VCC -
1
VCC -
0.4
V
CSP_, CSN_ Input Current
ILIM Input Current
Droop Amplifier Offset
ICSP, ICSN
IILIM
TA = +25°C
TA = +25°C
(1/N) x (VCSP_ -
VCSN_) at IFBAC = 0;
indicates
summation over all
power-up enabled
phases from 1 to N,
N=3
TA = +25°C
TA = 0°C to +85°C
-0.2
-0.1
-0.5
-0.75
+0.2
μA
+0.1
μA
+0.5
+0.75
mV/
phase
Droop Amplifier
Transconductance
IFBAC/[(VCSP_ - VCSN_)];
Gm(FBAC)
indicates summation over all power-up
enabled phases from 1 to N, N = 3,
393 400
406
μS
VFBAC = VCSN_ = 0.45V to 1.5V
Current-Monitor Offset
(1/N) x (VCSP_ - VCSN_) at IIMON = 0,
indicates summation over all power-up
-1.1
enabled phases from 1 to N, N = 3
mV/
+1
phase
Current-Monitor
Transconductance
IIMON/[(VCSP_ - VCSN_)];
Gm(IMON)
indicates summation over all power-up
enabled phases from 1 to N, N = 3,
1.552 1.6 1.648
mS
VCSN_ = 0.45V to 1.5V
GATE DRIVERS
DH_ Gate-Driver On-Resistance
DL_ Gate-Driver On-Resistance
RON(DH)
RON(DL)
BST_ - LX_ forced
to 5V
High state (pullup)
Low state (pulldown)
High state (pullup)
Low state (pulldown)
0.9
2.5
0.7
2
0.7
2
0.25 0.7
DH_ Gate-Driver Source Current
IDH(SOURCE)
DH_ forced to 2.5V,
BST_ - LX_ forced to 5V
2.2
A
DH_ Gate-Driver Sink Current
IDH(SINK)
DH_ forced to 2.5V,
BST_ - LX_ forced to 5V
2.7
A
DL_ Gate-Driver Source Current
DL_ Gate-Driver Sink Current
DL_ Transition Time
DH_ Transition Time
Internal BST_ Switch
On-Resistance
IDL(SOURCE)
IDL(SINK)
DL_ forced to 2.5V
DL_ forced to 2.5V
DL_ falling, CDL_ = 3nF
DL rising, CDL_ = 3nF
DH_ falling, CDH_ = 3nF
DH_ rising, CDH_ = 3nF
RON(BST) IBST_ = 10mA
2.7
A
8
A
20
ns
20
20
ns
20
10
20
_______________________________________________________________________________________ 5
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