VS-25TTS08STRRPBF 查看數據表（PDF） - Vishay Semiconductors
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VS-25TTS08STRRPBF Datasheet PDF : 7 Pages
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VS-25TTS...SPbF Series
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
IT(AV)
IRMS
ITSM
Maximum I2t for fusing
I2t
Maximum I2t for fusing
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
I2t
VTM
rt
VT(TO)
IRM/IDM
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
IH
IL
dV/dt
dI/dt
TEST CONDITIONS
VALUES
TYP. MAX.
TC = 93 °C, 180° conduction half sine wave
16
25
10 ms sine pulse, rated VRRM applied
300
10 ms sine pulse, no voltage reapplied
350
10 ms sine pulse, rated VRRM applied
450
10 ms sine pulse, no voltage reapplied
630
t = 0.1 ms to 10 ms, no voltage reapplied
6300
16 A, TJ = 25 °C
1.25
12.0
TJ = 125 °C
1.0
TJ = 25 °C
TJ = 125 °C
VR = Rated VRRM/VDRM
VS-25TTS08,
VS-25TTS12
Anode supply = 6 V,
resistive load, initial IT = 1 A,
TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
TJ = TJ max., linear to 80 %, VDRM = Rg - k = Open
0.5
10
-
150
200
500
150
UNITS
A
A2s
A2s
V
m
V
mA
V/μs
A/μs
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SYMBOL
PGM
PG(AV)
+ IGM
- VGM
IGT
VGT
VGD
IGD
TEST CONDITIONS
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
Anode supply = 6 V, resistive load, TJ = - 10 °C
Anode supply = 6 V, resistive load, TJ = 25 °C
Anode supply = 6 V, resistive load, TJ = 125 °C
TJ = 125 °C, VDRM = Rated value
VALUES
8.0
2.0
1.5
10
60
45
20
2.5
2.0
1.0
0.25
2.0
UNITS
W
A
V
mA
V
mA
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
SYMBOL
tgt
trr
tq
TJ = 25 °C
TEST CONDITIONS
TJ = 125 °C
VALUES
0.9
4
110
UNITS
μs
Revision: 05-Jul-13
2
Document Number: 94383
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