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VS-25TTS08SPBF 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
VS-25TTS08SPBF
Vishay
Vishay Semiconductors Vishay
VS-25TTS08SPBF Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
www.vishay.com
VS-25TTS...SPbF Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
TJ, TStg
Soldering temperature
Maximum thermal resistance,
junction to case
TS
RthJC
For 10 s (1.6 mm from case)
DC operation
Typical thermal resistance,
junction to ambient (PCB mount)
RthJA (1)
Approximate weight
Marking device
Case style D2PAK (SMD-220)
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm] copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994
VALUES
UNITS
- 40 to 125
°C
260
1.1
°C/W
40
2
g
0.07
oz.
25TTS08S
25TTS12S
130
RthJC (DC) = 1.1 °C/ W
120
Conduc tion Angle
110
30° 60°
90°
100
120°
180°
90
0
5
10
15
20
Average On-sta te Current (A)
Fig. 1 - Current Rating Characteristics
25
180°
120°
20
90°
60°
30°
15
RMSLimit
10
Conduc tion Angle
5
TJ= 125°C
0
0
4
8
12
16
20
Avera ge On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
130
R thJC (DC) = 1.1 °C/ W
120
110
Conduction Period
100
90
80
0
90°
60° 120°
30°
180° DC
5 10 15 20 25 30
Average On-sta te Current (A)
Fig. 2 - Current Rating Characteristics
35
DC
30
180°
120°
90°
25
60°
30°
20
RMS Limit
15
10
Conduction Period
5
TJ= 125°C
0
0
5 10 15 20 25 30
Avera ge On-sta te Current (A)
Fig. 4 - On-State Power Loss Characteristics
Revision: 05-Jul-13
3
Document Number: 94383
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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