MG12400D-BN2MM 查看數據表（PDF） - Littelfuse, Inc

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MG12400D-BN2MM

Power Module 1200V 400A IGBT Module

Littelfuse, Inc 

Power Module

1200V 400A IGBT Module

Figure 7: Diode Forward Characteristics

800

640

480

320

TJ =125°C

160

TJ =25°C

00

0.6

1.2

1.8

2.4

VF˄V˅

Figure 9: Switching Energy vs. Forward Current

48

RG=1.8Ω

40

VCE=600V

TVj =125°C

32

24

16

8

00 100 200 300 400 500 600 700 800

IF (A)

Figure 8: S witching Energy vs. Gate Resistor

24

IF=400A

VCE=600V

20 TVj =125°C

16

12

8

4

0 0 2 4 6 8 10 12 14 16 18

RG˄Ω˅

Figure 10: Transient Thermal Impedance

1

0.1

0.01

Diode

IGBT

0.001

0.001 0.01

0.1

1

10

Rectangular Pulse Duration (seconds)

MG12400D-BN2MM

1418

©2016 Littelfuse, Inc

Specifications are subject to change without notice.

Revised:07/21/16

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