ZXMD63N02XTA 查看數據表（PDF） - Zetex => Diodes

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ZXMD63N02XTA

DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Zetex => Diodes 

ZXMD63N02X

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

STATIC

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

Gate-Source Threshold Voltage

Static Drain-Source On-State Resistance

(1)

Forward Transconductance (3)

DYNAMIC (3)

V(BR)DSS 20

IDSS

IGSS

VGS(th) 0.7

RDS(on)

gfs

2.6

V

ID=250µA, VGS=0V

1

µA VDS=20V, VGS=0V

100

nA VGS=± 12V, VDS=0V

V

ID=250µA, VDS= VGS

0.130 Ω

0.150 Ω

VGS=4.5V, ID=1.7A

VGS=2.7V, ID=0.85A

S

VDS=10V,ID=0.85A

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

SWITCHING(2) (3)

Ciss

Coss

Crss

350

pF

VDS=15 V, VGS=0V,

120

pF f=1MHz

50

pF

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

Gate-Source Charge

Gate Drain Charge

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

3.4

8.1

13.5

9.1

6

0.65

2.5

ns

ns VDD =10V, ID=1.7A

ns

RG=6.0Ω, RD=5.7Ω

(Refer to test

ns circuit)

nC

V D S= 16 V , V GS= 4 . 5V ,

nC ID=1.7A

(Refer to test

nC circuit)

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

VSD

0.95

Reverse Recovery Time (3)

trr

15.0

Reverse Recovery Charge(3)

Qrr

5.9

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

V

Tj=25°C, IS=1.7A,

V G S= 0V

ns Tj=25°C, IF=1.7A,

di/dt= 100A/µs

nC

PROVISIONAL ISSUE A - JUNE 1999

28

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