SI6953DQ 查看數據表（PDF） - Fairchild Semiconductor
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SI6953DQ Datasheet PDF : 5 Pages
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September 2001
Si6953DQ
Dual 20V P-Channel PowerTrench MOSFET
General Description
This P-Channel MOSFET is a rugged gate version of
Fairchild's Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
Applications
• Load switch
• Battery protection
• DC/DC conversion
• Power management
Features
• –1.9 A, –20 V, RDS(ON) = 170 mΩ @ VGS = –10 V.
RDS(ON) = 320 mΩ @ VGS = –4.5V.
• Extended VGSS range (±20V) for battery applications
• Low gate charge
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
Pin 1
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
VGSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1)
PD
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristic
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
6953
Si6953DQ
13’’
1
2
3
4
Ratings
–20
±20
–1.9
–15
1.0
0.6
–55 to +150
100
125
Tape width
12mm
8
7
6
5
Units
V
V
A
W
°C
°C/W
Quantity
2500 units
2001 Fairchild Semiconductor Corporation
Si6953DQ Rev. B (W)
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