SI6953DQ 查看數據表（PDF） - Fairchild Semiconductor
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SI6953DQ Datasheet PDF : 5 Pages
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Typical Characteristics
12
VGS = -10V
9
-6.0V
-4.5V
6
-3.5V
3
-3.0V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.6
ID = -1.9A
VGS = -10V
1.4
1.2
1
0.8
0.6
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
6
VDS = -5V
5
4
TA = -55oC
25oC
125oC
3
2
1
0
1
1.5
2
2.5
3
3.5
4
4.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.4
2.2
VGS = -4.0V
2
1.8
-4.5V
1.6
-5.0V
1.4
-6.0V
1.2
-7.0V
-8.0V
-10V
1
0.8
0
3
6
9
12
-ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.55
ID =-1A
0.45
0.35
0.25
TA = 125oC
0.15
TA = 25oC
0.05
2
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
1
0.1
0.01
0.001
VGS = 0V
TA = 125oC
25oC
-55oC
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
Si6953DQ Rev. B (W)
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