1N6642U02D(2011) 查看數據表（PDF） - STMicroelectronics

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1N6642U02D
(Rev.:2011)

Aerospace 0.3 A - 100 V switching diode

STMicroelectronics 

Characteristics

1

Characteristics

1N6642U

Table 2. Absolute ratings (limiting values)

Symbol

Parameter

Value

VRRM Repetitive peak reverse voltage

100

IF(RMS) Forward rms current

0.5

IF(AV) Average forward rectified current (1)

300

IFSM Forward surge current

tp = 8.3 ms sinusoidal,

2

tamb ≤ 25 °C

Tstg

Storage temperature range

-65 to +175

Tj

Operating junction temperature range

Tsol

Maximum soldering temperature (2)

-65 to +175

245

1. For all variants at Tc ≥ +155 °C per diode, derate linearly to 0 A at +175 °C.

2. Maximum duration 5 s. The same package must not be re-soldered until 3 minutes have elapsed.

Table 3. Thermal resistance

Symbol

Rth (j-c)

Rth (j-a)

Junction to case (1)

Junction to ambient

1. Package mounted on infinite heatsink

Parameter

Value

60

280

Table 4. Static electrical characteristics

Symbol

Parameter

VBR (1) Breakdown voltage

IR (1) Reverse current

VF (2) Forward voltage

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 680 µs, δ < 2%

Tests conditions

Tj = 25 °C

Tj = 25 °C

Tj = 25 °C

Tj = 150 °C

Tj = 150 °C

Tj = 25 °C

Tj = 25 °C

Tj = 150 °C

Tj = -55 °C

IR = 100 µA

VR = 20 V

VR = 75 V

VR = 20 V

VR = 75 V

IF = 10 mA

IF = 100 mA

IF = 10 mA

IF = 100 mA

Min.

100

-

-

-

-

-

-

-

-

To evaluate the conduction losses use the following equation:

P = 0.74 x IF(AV) + 1.00 x IF2(RMS )

Typ.

-

-

-

-

-

-

-

-

-

Max.

-

25

50

30

40

800

1200

800

1200

Unit

V

A

mA

A

°C

°C

°C

Unit

°C/W

Unit

V

nA

nA

µA

µA

mV

2/7

Doc ID 16972 Rev 2

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