1N6642U02D(2011) 查看數據表（PDF） - STMicroelectronics

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1N6642U02D
(Rev.:2011)

Aerospace 0.3 A - 100 V switching diode

STMicroelectronics 

1N6642U

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

IF = IR = 10 mA(1)

trr

Reverse recovery time

IF = 1 A, Vr = 30 V, dI/dt = -15 A/µs

VFP Forward recovery voltage IFM = 200 mA

tFR Forward recovery time

IFM = 200 mA

Cj

Diode capacitance

VR = 0 V, V = 50 mV, F = 1 MHz

VR = 1.5 V, V = 50 mV, F = 1 MHz

1. Guaranteed but not tested

Min. Typ. Max. Unit

--9

ns

20

- - 5V

- - 20 ns

- - 5 pF

- - 2.8 pF

Figure 1.

IFM (A)

1.2

Forward voltage drop versus

forward current (typical values)

Figure 2.

IFM (A)

1.2

Forward voltage drop versus

forward current (maximum values)

1.0

1.0

0.8

0.8

0.6

Tj=150 °C

0.4

Tj=25 °C

Tj=-55 °C

0.2

VFM (V)

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

0.6

Tj=150 °C

0.4

Tj=25 °C

Tj=-55 °C

0.2

VFM (V)

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Doc ID 16972 Rev 2

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