1N6642U 查看數據表（PDF） - STMicroelectronics

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1N6642U

Aerospace 0.3 A - 100 V switching diode

STMicroelectronics 

1N6642U

Characteristics

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

IF = IR = 10 mA(1)

trr

Reverse recovery time

IF = 1 A, Vr = 30 V, dI/dt = -15 A/µs

VFP Forward recovery voltage IFM = 200 mA

tFR Forward recovery time

IFM = 200 mA

Cj

Diode capacitance

VR = 0 V, V = 50 mV, F = 1 MHz

VR = 1.5 V, V = 50 mV, F = 1 MHz

1. Guaranteed but not tested

Min. Typ. Max. Unit

--9

ns

- - 20

- - 5V

- - 20 ns

--5

pF

- - 2.8

Figure 1. Forward voltage drop versus forward Figure 2. Forward voltage drop versus forward

current (typical values)

current (maximum values)

IFM (A)

1.2

1.0

0.8

0.6

Tj=150 °C

0.4

Tj=25 °C

Tj=-55 °C

0.2

VFM (V)

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

IFM (A)

1.2

1.0

0.8

0.6

Tj=150 °C

0.4

Tj=25 °C

Tj=-55 °C

0.2

VFM (V)

0.0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values)

IR(nA)

1.E+03

1.E+02

Tj=150 °C

1.E+01

Tj=75 °C

1.E+00

Tj=25 °C

1.E-01

0

VR (V)

10 20 30 40 50 60 70 80 90 100 110

Figure 4. Relative variation of thermal

impedance, junction to case, versus pulse

duration

Z /R th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4 Single pulse

0.3

0.2

0.1

0.0

1.E-06

1.E-05

1.E-04

1.E-03

1.E-02

tP(s)

1.E-01

1.E+00

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