1SS355TE-17(2011) 查看數據表（PDF） - ROHM Semiconductor
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1SS355TE-17 Datasheet PDF : 4 Pages
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1SS355
Data Sheet
100
Ta=125℃
10
Ta=75℃
1
Ta=25℃
Ta=25℃
10000
1000
100
10
1
Ta=125℃
Ta=75℃
Ta=25℃
Ta=25℃
0.1
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE : VF(V)
VF-IF CHARACTERISTICS
0.1
0
20
40
60
80 100 120
REVERSE VOLTAGE : VR(V)
VR-IR CHARACTERISTICS
10
f=1MHz
1
0.1
0
5
10
15
20
25
30
REVERSE VOLTAGE : VR(V)
VR-Ct CHARACTERISTICS
910
100
1
Ta=25
90
Ta=25℃
0.99
900
IF=100mA
80
VR=80V
0.98
n=30pcs
70
n=30pcs
0.97
890
60
0.96
50
0.95
880
40
0.94
AVE:885.9mV
870
860
30
20
10
AVE:31.7nA
0
0.93
0.92
0.91
0.9
Ta=25℃
VR=0V
f=1MHz
n=10pcs
AVE:0.961pF
VF DISPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
15
10
5
0
100
10
1
0.1
3
Ifsm
1cyc
2.5
8.3ms
2
1.5
1
AVE:13.6A
0.5
0
IFSM DISRESION MAP
Ta=25℃
VR=6V
IF=10mA
RL=100Ω
AVE:1.3ns
trr DISPERSION MAP
20
Ifsm
15
8.3ms 8.3ms
1cyc
10
5
0
0.1
1
10
100
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Ifsm
t
1
10
TIME:t(ms)
IFSM-t CHARACTERISTICS
1000
Rth(j-a)
0.001
100
Rth(j-c)
Mounted on epoxy board
0.0005
D=1/2
10
IM=1mA
IF=10mA
DC
Sin(θ＝180)
1ms time
300us
1
100
0.001 0.01 0.1
1
10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
0
0
20 40 60 80 100 120
REVERSE VOLTAGE : VR(V)
VR-PR CHARACTERISTICS
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2011.08 - Rev.D
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