1SS355TE-17 查看數據表（PDF） - ROHM Semiconductor

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产品描述 (功能)

生产厂家

1SS355TE-17

Switching Diode

ROHM Semiconductor 

Switching Diode

1SS355

lApplication

High speed switching

lDimensions (Unit : mm)

1.25±0.1

0.1±0.1

　　　 0.05

Datasheet

　lLand size figure (Unit : mm)

0.9MIN.

lFeatures

1) Ultra small mold type.

(UMD2)

2) High reliability.

lConstruction

Silicon epitaxial planar

UMD2

　lStructure

ROHM : UMD2 0.3±0.05

0.7±0.2

　　　 0.1

JEDEC : SOT-323

JEITA : SC-90/A

dot (year week factory)

lTaping specifications (Unit : mm)

4.0±0.1 2.0±0.05

φ1.55±0.05

f1.550.05

0.3±0.1

1.40±0.1

4.0±0.1

φf11..0055

1.0±0.1

lAbsolute maximum ratings (Ta= 25°C)

Parameter

Symbol

Limits

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Forward current

VRM

90

V

VR

80

V

IFM

225

mA

Average rectified forward current

Io

100

mA

Surge current (t=1s)

Isurge

500

mA

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-55 to +150 °C

lElectrical characteristics (Ta = 25°C)

Parameter

Forward voltage

Reverse current

Capacitance between terminals

Reverse recovery time

Symbol Min. Typ. Max. Unit

Conditions

VF

-

- 1.2 V IF=100mA

IR

-

- 0.1 mA VR=80V

Ct

-

-

3 pF VR=0.5V, f=1MHz

trr

-

-

4 ns VR=6V, IF=10mA,RL=100W

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1/5

2013.11 - Rev.E

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