PDZ-B 查看數據表（PDF） - NXP Semiconductors.

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PDZ-B

Voltage regulator diodes

NXP Semiconductors. 

NXP Semiconductors

Voltage regulator diodes

Product data sheet

PDZ-B series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

IF

IZSM

PARAMETER

continuous forward current

non-repetitive peak reverse current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

MIN. MAX. UNIT

−

200

mA

tp = 100 μs; square wave;

Tamb = 25 °C prior to surge

Tamb = 25 °C; note 1;

−

see Fig.2

see Table 2

400

mW

−65

+150 °C

−

150

°C

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth(j-s)

Rth(j-a)

thermal resistance from junction to soldering point

thermal resistance from junction to ambient

note 1

Note

1. Device mounted on a printed-circuit board measuring 11 × 25 × 1.6 mm.

VALUE

130

340

UNIT

K/W

K/W

2004 Mar 22

3

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