MX29LV160DTTI70G 查看數據表（PDF） - Macronix International

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MX29LV160DTTI70G

16M-BIT [2M x 8 / 1M x 16] 3V SUPPLY FLASH MEMORY

Macronix International 

MX29LV160D T/B

Contents

FEATURES.............................................................................................................................................................. 5

GENERAL DESCRIPTION...................................................................................................................................... 6

PIN CONFIGURATIONS.......................................................................................................................................... 7

PIN DESCRIPTION.................................................................................................................................................. 9

BLOCK DIAGRAM................................................................................................................................................ 10

BLOCK DIAGRAM DESCRIPTION....................................................................................................................... 11

BLOCK STRUCTURE........................................................................................................................................... 12

Table 1-1. MX29LV160DT SECTOR ARCHITECTURE............................................................................... 12

Table 1-2. MX29LV160DB SECTOR ARCHITECTURE .............................................................................. 13

BUS OPERATION................................................................................................................................................. 14

Table 2-1. BUS OPERATION....................................................................................................................... 14

Table 2-2. BUS OPERATION....................................................................................................................... 15

FUNCTIONAL OPERATION DESCRIPTION........................................................................................................ 16

WRITE COMMANDS/COMMAND SEQUENCES....................................................................................... 16

REQUIREMENTS FOR READING ARRAY DATA....................................................................................... 16

RESET# OPERATION................................................................................................................................. 17

SECTOR PROTECT OPERATION.............................................................................................................. 17

CHIP UNPROTECT OPERATION.............................................................................................................. 17

HARDWARE WRITE PROTECT................................................................................................................. 17

ACCELERATED PROGRAMMING OPERATION ....................................................................................... 17

TEMPORARY SECTOR UNPROTECT OPERATION................................................................................. 18

AUTOMATIC SELECT OPERATION........................................................................................................... 18

VERIFY SECTOR PROTECT STATUS OPERATION................................................................................. 18

DATA PROTECTION................................................................................................................................... 18

LOW VCC WRITE INHIBIT.......................................................................................................................... 18

WRITE PULSE "GLITCH" PROTECTION................................................................................................... 18

LOGICAL INHIBIT........................................................................................................................................ 19

POWER-UP SEQUENCE............................................................................................................................ 19

POWER-UP WRITE INHIBIT....................................................................................................................... 19

POWER SUPPLY DECOUPLING................................................................................................................ 19

COMMAND OPERATIONS................................................................................................................................... 20

TABLE 3. MX29LV160D T/B COMMAND DEFINITIONS............................................................................ 20

AUTOMATIC PROGRAMMING OF THE MEMORY ARRAY....................................................................... 21

ERASING THE MEMORY ARRAY............................................................................................................... 21

SECTOR ERASE......................................................................................................................................... 22

CHIP ERASE.............................................................................................................................................. 23

SECTOR ERASE SUSPEND...................................................................................................................... 23

SECTOR ERASE RESUME........................................................................................................................ 24

AUTOMATIC SELECT OPERATIONS......................................................................................................... 24

AUTOMATIC SELECT COMMAND SEQUENCE........................................................................................ 24

P/N:PM1315

REV. 1.2, DEC. 22, 2011

2

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